型号:

PHB32N06LT,118

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 60V 34A SOT404
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
PHB32N06LT,118 PDF
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 34A
开态Rds(最大)@ Id, Vgs @ 25° C 37 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2V @ 1mA
闸电荷(Qg) @ Vgs 17nC @ 5V
输入电容 (Ciss) @ Vds 1280pF @ 25V
功率 - 最大 97W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 标准包装
其它名称 568-5941-6
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